semihow rev.a0,december 2016 HRLF53N06H dec 2016 absolute maximum ratings t j =25 unless otherwise specified symbol parameter value units v dss drain - source voltage 60 v v gs gate - source voltage 20 v i d drain current t c = 25 90 a t c = 100 57 a i dm pulsed drain current 250 a e as single pulsed avalanche energy l=1mh 80 mj p d power dissipation t c = 25 83 w t a = 25 2.0 w t j , t stg operating and storage temperature range - 55 to + 150 thermal resistance characteristics symbol parameter typ. max. units r jc junction -to - case -- 1.5 /w r ja junction -to - ambient (steady state) -- 62 /w ? optimized for high speed switching, logic level ? enhanced body diode dv / dt capability ? enhanced avalanche ruggedness ? 100% uis tested, 100% rg tested ? lead free, halogen free 8dfn 5x6 parameter value unit bv dss 60 v i d 90 a r ds(on), typ @10v 4.1 m r ds(on), typ @4.5v 5.6 m key parameters package & internal circuit HRLF53N06H 60v n - channel trench mosfet features application s s s g d d d d ? synchronous rectification in smps ? hard switching and high speed circuit ? dc/dc in telecoms and industrial
semihow rev.a0,december 2016 HRLF53N06H electrical characteristics t j =25 c unless otherwise specified symbol parameter test conditions min typ max units i s continuous source - drain diode forward current -- -- 90 a i sm pulsed source - drain diode forward current -- -- 250 v sd source - drain diode forward voltage i s = 20 a, v gs = 0 v -- 0.9 1.2 v trr reverse recovery time i s = 20 a, v r = 30 v di f / dt = 300 a/ s -- 30 -- ? qrr reverse recovery charge -- 53 -- nc on characteristics bv dss drain - source breakdown voltage v gs = 0 v, i d = 250 ? 60 -- -- v i dss zero gate voltage drain current v ds = 60 v, v gs = 0 v -- -- 1 ? v ds = 60 v, t j = 100 -- -- 100 ? i gss gate - body leakage current v gs = 20 v, v ds = 0 v -- -- 100 ? off characteristics c iss input capacitance v ds = 30 v, v gs = 0 v, f = 1.0 mhz -- 2274 -- ? c oss output capacitance -- 793 -- ? c rss reverse transfer capacitance -- 35 -- ? r g gate resistance v gs = 0 v, v ds = 0 v, f = 1mhz -- 1.5 -- ? dynamic characteristics t d(on) turn - on time v ds = 30 v, i d = 20 a, r g = 10 ? -- 11 -- ? t r turn - on rise time -- 7 -- ? t d(off) turn - off delay time -- 35 -- ? t f turn - off fall time -- 10 -- ? q g (10v) total gate charge v ds = 30 v, i d = 20 a, v gs = 10 v -- 36 -- nc q g (4.5v) total gate charge -- 18 -- nc q gs gate - source charge -- 4.5 -- nc q gd gate - drain charge -- 7.5 -- nc switching characteristics source - drain diode maximum ratings and characteristics v gs gate threshold voltage v ds = v gs , i d = 250 ? 1.0 -- 3.0 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 20 a -- 4.1 5.3 m ? v gs = 4.5 v, i d = 20 a -- 5.6 7.5 m ? g fs forward transconductance v ds = 5 v, i d = 20 a -- 48 -- s
semihow rev.a0,december 2016 HRLF53N06H typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics
semihow rev.a0,december 2016 HRLF53N06H typical characteristics (continued) figure 7. on - resistance variation vs gate - source voltage figure 8. on - resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve
semihow rev.a0,december 2016 HRLF53N06H fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as = l l i as 2 ---- 2 1 v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut 10v dut r g l i d bv dss t p v dd i as v ds (t) i d (t) time
semihow rev.a0,december 2016 HRLF53N06H fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ? i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
semihow rev.a0,december 2016 HRLF53N06H package dimension 8dfn 5x6
semihow rev.a0,december 2016 HRLF53N06H version description date approved 0 initiate specification 20161208 ygcho 1 2 3 4 5 6 7 8 9 10 revision history
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